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| DN2535 DN2540 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX 350V 400V * Same as SOT-89. RDS(ON) (max) 25 25 IDSS (min) 150mA 150mA Order Number / Package TO-92 DN2535N3 DN2540N3 TO-220 DN2535N5 DN2540N5 TO-243AA* -- DN2540N8 Product shipped on 2000 piece carrier tape reels. Product marking for TO-243AA: Features High input impedance Low input capacitance Fast switching speeds Low on resistance Free from secondary breakdown Low input and output leakage DN5D Where = 2-week alpha date code Advanced DMOS Technology Not recommended for new designs. For products in TO-92 (N3) package and TO-243AA (N8) package, please use DN3535 or DN3545 instead. These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Applications Normally-on switches Solid state relays Converters Linear amplifiers Constant current sources Power supply circuits Telecom Package Options Absolute Maximum Ratings Drain-to-Source Voltage Drain-to-Gate Voltage Gate-to-Source Voltage Operating and Storage Temperature Soldering Temperature* * Distance of 1.6 mm from case for 10 seconds. 12/13/01 BVDSX BVDGX 20V -55C to +150C 300C D G D S GD S SGD TO-243AA (SOT-89) TO-92 TO-220 TAB: DRAIN Note: See Package Outline section for dimensions. Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the 1 Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website. DN2535/DN2540 Thermal Characteristics Package TO-92 TO-220 TO-243AA ID (continuous)* 120mA 500mA 170mA ID (pulsed) 500mA 500mA 500mA Power Dissipation @ TC = 25C 1.0W 15.0W 1.6W (TA = 25) jc ja IDR* 120mA 500mA 170mA IDRM 500mA 500mA 500mA C/W 125 8.3 15 C/W 170 70 78 * ID (continuous) is limited by max rated Tj. Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant PD increase possible on ceramic substrate. TA = 25C Electrical Characteristics (@ 25C unless otherwise specified) Symbol BVDSX VGS(OFF) VGS(OFF) IGSS ID(OFF) Parameter Drain-to-Source Breakdown Voltage Gate-to-Source OFF Voltage Change in VGS(OFF) with Temperature Gate Body Leakage Current Drain-to-Source Leakage Current DN2540 DN2535 Min 400 350 -1.5 -3.5 4.5 100 10 1 IDSS RDS(ON) RDS(ON) GFS CISS COSS CRSS td(ON) tr td(OFF) tf VSD trr Saturated Drain-to-Source Current Static Drain-to-Source ON-State Resistance Change in RDS(ON) with Temperature Forward Transconductance Input Capacitance Common Source Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Drop Reverse Recovery Time 800 325 200 12 1 300 30 5 10 15 15 20 1.8 V ns VGS = -10V, ISD = 120mA VGS = -10V, ISD = 1A ns VDD = 25V, ID = 150mA, RGEN = 25 pF 150 17 25 1.1 V mV/C nA A mA mA %/C m VDS = 25V, ID= 10A VDS = 25V, ID= 10A VGS = 20V, VDS = 0V VGS = -10V, VDS = Max Rating VGS = -10V, VDS = 0.8 Max Rating TA = 125C VGS = 0V, VDS = 25V VGS = 0V, ID = 120mA VGS = 0V, ID = 120mA ID = 100mA, VDS = 10V VGS = -10V, VDS = 25V f = 1 MHz Typ Max Unit V Conditions VGS = -5V, ID = 100A Notes: 1. All D.C. parameters 100% tested at 25C unless otherwise stated. (Pulse test: 300s pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V 90% 10% t(ON) PULSE GENERATOR Rgen t(OFF) tr td(OFF) tF 10% td(ON) VDD OUTPUT 0V 10% INPUT 90% 90% 2 VDD RL OUTPUT D.U.T. DN2535/DN2540 Typical Performance Curves Output Characteristics 0.5 VGS = 1.0V 0.5V 0.4 200 VGS = 1.0V 0.5V 0V 250 Saturation Characteristics ID (amperes) 0.3 0V ID (milliamps) 150 -0.5V 100 0.2 0.1 -0.5V 50 -1.0V 0 0 1 2 3 4 5 -1.0V 0 0 80 160 240 320 400 VDS (volts) Transconductance vs. Drain Current 0.5 VDS (volts) Power Dissipation vs. Temperature 20 VDS = 10V 0.4 TA = -55C TO-220 GFS (siemens) PD (watts) 0.3 TA = 25C 10 0.2 TA = 125C 0.1 TO-243AA TO-92 0 0 50 100 150 200 250 0 0 25 50 75 100 125 150 (TA = 25C) ID (milliamps) Maximum Rated Safe Operating Area 1 1.0 TO-92/TO-220 (pulsed) (TA = 25C) TC (C) Thermal Response Characteristics TO-243AA TA = 25C PD = 1.6W TO-220 (DC) Thermal Resistance (normalized) SOT-89 (DC) 0.8 ID (amperes) 0.1 TO-92 (DC) 0.6 0.4 0.01 0.2 TO-220 TC = 25C PD = 15W TO-92 TC = 25C PD = 1.0W 0.001 1 TC = 25C 10 100 1000 0 0.001 0.01 0.1 1 10 VDS (volts) tp (seconds) 3 DN2535/DN2540 Typical Performance Curves BVDSS Variation with Temperature 1.1 100 On-Resistance vs. Drain Current 1.05 VGS = -5V 80 VGS = 0V BVDSS Normalized 1.0 RDS(on) (Ohms) -50 0 50 100 150 60 0.95 40 0.9 20 0 0 80 160 240 320 400 Tj (C) Transfer Characteristics 0.40 2.5 ID (milliamps) VGS(off) and RDS Variation with Temperature TA = -55C 0.32 VDS = 10V TA = 25C 2 ID (amperes) RDS (ON) @ ID = 120mA Normalized 0.24 TA = 125C 1.5 0.16 1 VGS(OFF) @ 10A 0.08 0.5 0 -3 2 -1 0 1 2 0 -50 0 50 100 150 VGS (Volts) Capacitance Vs. Drain-to-Source Voltage 200 Tj (C) Gate Drive Dynamic Characteristics 15 CISS 150 C (Picofarads) 10 VGS (Volts) 200pF 5 100 VGS = -10V VDS = 20V 0 50 VDS = 40V CRSS 0 0 10 20 30 COSS 40 -5 170pF 0 0.4 0.8 1.2 1.6 2.0 VDS (Volts) QC (Nanocoulombs) 12/13/010 (c)2001 Supertex Inc. All rights reserved. Unauthorized use or reproduction prohibited. 4 1235 Bordeaux Drive, Sunnyvale, CA 94089 TEL: (408) 744-0100 * FAX: (408) 222-4895 www.supertex.com |
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